CBSE Class 12 · 2006 · All India · SemiconductorsShort Answer

WhatsApp Email
Explain
(i) forward biasing and
(ii) reverse biasing of a p-n junction diode. With the help of a circuit diagram, explain the use of this device as a half-wave rectifier.

Solution

(i) In forward bias the p-side is connected to the positive terminal and the n-side to the negative terminal; the applied field opposes the barrier field, the depletion layer narrows, and a large forward current flows once the knee voltage is crossed.
(ii) In reverse bias the p-side is negative and the n-side positive; the barrier widens and only a tiny minority-carrier current flows.
Half-wave rectifier: the ac source feeds a diode in series with a load . During the half-cycle that forward biases the diode it conducts and gives an output across ; during the other half-cycle it is reverse biased and blocks current, so the output is unidirectional pulsating dc.

CBSE Class 12 Board · 2006 · All India · Subjective

More board questions on Semiconductors

  1. A pure Si crystal having atoms is doped with 1 ppm concentration of antimony. If the concentration of holes in the doped crystal is found to be , the concentration (in ) of intrinsic charge carr …
    CBSE 2024View solution →
  2. (a) Explain the characteristics of a p-n junction diode that makes it suitable for its use as a rectifier.
    (b) With the help of a circuit diagram, explain the working of a full wave rectifier.
    CBSE 2024View solution →
  3. Explain the following, giving reasons.
    (a) A doped semiconductor is electrically neutral.
    (b) In a p-n junction under equilibrium, there is no net current.
    (c) In a diode, the reverse current is practically independent of the applied voltage.
    CBSE 2024View solution →
  4. In an extrinsic semiconductor, the number density of holes is . If the number density of intrinsic carriers is , the number density of electrons in it is
    CBSE 2023View solution →
  5. Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The conductivity of
    CBSE 2023View solution →
  6. The formation of depletion region in a p-n junction diode is due to
    CBSE 2023View solution →